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RS1E350BNTB

RS1E350BNTB

RS1E350BNTB

Rohm Semiconductor

MOSFET N-CH 30V 35A 8HSOP

compliant

RS1E350BNTB Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.68166 -
1593 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7900 pF @ 15 V
FET Feature -
Power Dissipation (Max) 35W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSOP
Package / Case 8-PowerTDFN
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