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DMT10H032LSS-13

DMT10H032LSS-13

DMT10H032LSS-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V SO-8 T&R

compliant

DMT10H032LSS-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.24177 $0.24177
500 $0.2393523 $119.67615
1000 $0.2369346 $236.9346
1500 $0.2345169 $351.77535
2000 $0.2320992 $464.1984
2500 $0.2296815 $574.20375
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 683 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
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