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RS1E200BNTB

RS1E200BNTB

RS1E200BNTB

Rohm Semiconductor

MOSFET N-CH 30V 20A 8HSOP

non-compliant

RS1E200BNTB Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.18910 -
5,000 $0.17690 -
12,500 $0.17080 -
0 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 25W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSOP
Package / Case 8-PowerTDFN
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