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SIHD3N50DT1-GE3

SIHD3N50DT1-GE3

SIHD3N50DT1-GE3

Vishay Siliconix

MOSFET N-CH 500V 3A DPAK

SOT-23

non-compliant

SIHD3N50DT1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.38610 $0.3861
500 $0.382239 $191.1195
1000 $0.378378 $378.378
1500 $0.374517 $561.7755
2000 $0.370656 $741.312
2500 $0.366795 $916.9875
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 100 V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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