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Name | Value |
---|---|
Product Status | Not For New Designs |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 21mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 5 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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