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SI7655DN-T1-GE3

SI7655DN-T1-GE3

SI7655DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 40A PPAK1212-8S

non-compliant

SI7655DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.84005 -
6,000 $0.81090 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 10 V
FET Feature -
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
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