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RQ6C050UNTR

RQ6C050UNTR

RQ6C050UNTR

Rohm Semiconductor

MOSFET N-CH 20V 5A TSMT6

non-compliant

RQ6C050UNTR Pricing & Ordering

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3,000 $0.15190 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.25W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSMT6 (SC-95)
Package / Case SOT-23-6 Thin, TSOT-23-6
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