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IRFW840BTM

IRFW840BTM

IRFW840BTM

N-CHANNEL POWER MOSFET

non-compliant

IRFW840BTM Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.44000 $0.44
500 $0.4356 $217.8
1000 $0.4312 $431.2
1500 $0.4268 $640.2
2000 $0.4224 $844.8
2500 $0.418 $1045
4800 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 134W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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