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RF4E110GNTR

RF4E110GNTR

RF4E110GNTR

Rohm Semiconductor

MOSFET N-CH 30V 11A HUML2020L8

compliant

RF4E110GNTR Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.16275 -
6,000 $0.15225 -
15,000 $0.14700 -
0 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.3mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 504 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package HUML2020L8
Package / Case 8-PowerUDFN
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