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DMN10H099SK3-13

DMN10H099SK3-13

DMN10H099SK3-13

Diodes Incorporated

MOSFET N-CH 100V 17A TO252

non-compliant

DMN10H099SK3-13 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.28002 -
5,000 $0.26286 -
12,500 $0.25428 -
25,000 $0.24960 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1172 pF @ 50 V
FET Feature -
Power Dissipation (Max) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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