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RDD050N20TL

RDD050N20TL

RDD050N20TL

Rohm Semiconductor

MOSFET N-CH 200V 5A CPT3

non-compliant

RDD050N20TL Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.65520 -
4280 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 720mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 292 pF @ 10 V
FET Feature -
Power Dissipation (Max) 20W (Tc)
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package CPT3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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