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IPP65R600E6XKSA1

IPP65R600E6XKSA1

IPP65R600E6XKSA1

MOSFET N-CH 650V 7.3A TO220-3

non-compliant

IPP65R600E6XKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.60000 $0.6
500 $0.594 $297
1000 $0.588 $588
1500 $0.582 $873
2000 $0.576 $1152
2500 $0.57 $1425
9580 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
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