Welcome to ichome.com!

logo
Home

R6507ENXC7G

R6507ENXC7G

R6507ENXC7G

Rohm Semiconductor

650V 7A TO-220FM, LOW-NOISE POWE

non-compliant

R6507ENXC7G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.08000 $3.08
500 $3.0492 $1524.6
1000 $3.0184 $3018.4
1500 $2.9876 $4481.4
2000 $2.9568 $5913.6
2500 $2.926 $7315
1000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 665mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 25 V
FET Feature -
Power Dissipation (Max) 46W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

IXTP230N04T4M
IXTP230N04T4M
$0 $/piece
SIHH21N65E-T1-GE3
SI4490DY-T1-E3
IXFX150N15
IXFX150N15
$0 $/piece
BUZ76
BUZ76
$0 $/piece
STB3NK60ZT4
FDP054N10
FDP054N10
$0 $/piece
IXFK180N15P
IXFK180N15P
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.