Welcome to ichome.com!

logo
Home

SIHH21N65E-T1-GE3

SIHH21N65E-T1-GE3

SIHH21N65E-T1-GE3

Vishay Siliconix

MOSFET N-CH 650V 20.3A PPAK 8X8

compliant

SIHH21N65E-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $3.47463 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 99 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2404 pF @ 100 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

SI4490DY-T1-E3
IXFX150N15
IXFX150N15
$0 $/piece
BUZ76
BUZ76
$0 $/piece
STB3NK60ZT4
FDP054N10
FDP054N10
$0 $/piece
IXFK180N15P
IXFK180N15P
$0 $/piece
PMV19XNEAR
PMV19XNEAR
$0 $/piece
CPH6414-TL-E
CPH6414-TL-E
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.