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R6504END3TL1

R6504END3TL1

R6504END3TL1

Rohm Semiconductor

650V 4A TO-252, LOW-NOISE POWER

compliant

R6504END3TL1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.80000 $1.8
500 $1.782 $891
1000 $1.764 $1764
1500 $1.746 $2619
2000 $1.728 $3456
2500 $1.71 $4275
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 25 V
FET Feature -
Power Dissipation (Max) 58W (Tc)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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