Welcome to ichome.com!

logo
Home

R6504END3TL1

R6504END3TL1

R6504END3TL1

Rohm Semiconductor

650V 4A TO-252, LOW-NOISE POWER

compliant

R6504END3TL1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.80000 $1.8
500 $1.782 $891
1000 $1.764 $1764
1500 $1.746 $2619
2000 $1.728 $3456
2500 $1.71 $4275
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 25 V
FET Feature -
Power Dissipation (Max) 58W (Tc)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

STP3NK60ZFP
FDS86267P
FDS86267P
$0 $/piece
NVJS4151PT1G
NVJS4151PT1G
$0 $/piece
G20P10KE
SIHG16N50C-E3
FDB0260N1007L
FDB0260N1007L
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.