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AOU3N60

AOU3N60

AOU3N60

MOSFET N-CH 600V 2.5A TO251-3

non-compliant

AOU3N60 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 370 pF @ 25 V
FET Feature -
Power Dissipation (Max) 56.8W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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