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RJK6015DPK-00#T0

RJK6015DPK-00#T0

RJK6015DPK-00#T0

MOSFET N-CH 600V 21A TO3P

non-compliant

RJK6015DPK-00#T0 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-220-3 Full Pack
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