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IPD80R2K8CEBTMA1

IPD80R2K8CEBTMA1

IPD80R2K8CEBTMA1

MOSFET N-CH 800V 1.9A TO252-3

non-compliant

IPD80R2K8CEBTMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.39861 -
5,000 $0.38107 -
12,500 $0.36853 -
25,000 $0.35850 -
62,500 $0.34847 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 100 V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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