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NP109N04PUG-E1-AY

NP109N04PUG-E1-AY

NP109N04PUG-E1-AY

MOSFET N-CH 40V 110A TO263-3

non-compliant

NP109N04PUG-E1-AY Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15750 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 220W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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