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PMN23UN,165

PMN23UN,165

PMN23UN,165

NXP USA Inc.

MOSFET N-CH 20V 6.3A 6TSOP

non-compliant

PMN23UN,165 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 28mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 10.6 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-74
Package / Case SC-74, SOT-457
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