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HAT2168HWS-E

HAT2168HWS-E

HAT2168HWS-E

MOSFET N-CH 30V 30A 5LFPAK

non-compliant

HAT2168HWS-E Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1730 pF @ 10 V
FET Feature -
Power Dissipation (Max) 15W (Tc)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package LFPAK
Package / Case SC-100, SOT-669
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