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SPP11N60CFDHKSA1

SPP11N60CFDHKSA1

SPP11N60CFDHKSA1

MOSFET N-CH 600V 11A TO220-3

non-compliant

SPP11N60CFDHKSA1 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 440mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
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