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IXFX200N10P

IXFX200N10P

IXFX200N10P

IXYS

MOSFET N-CH 100V 200A PLUS247-3

SOT-23

non-compliant

IXFX200N10P Pricing & Ordering

Quantity Unit Price Ext. Price
30 $9.62000 $288.6
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 235 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 830W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3 Variant
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