Welcome to ichome.com!

logo
Home

RM8N650HD

RM8N650HD

RM8N650HD

Rectron USA

MOSFET N-CHANNEL 650V 8A TO263-2

compliant

RM8N650HD Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.52000 $0.52
500 $0.5148 $257.4
1000 $0.5096 $509.6
1500 $0.5044 $756.6
2000 $0.4992 $998.4
2500 $0.494 $1235
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 50 V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

SCT2080KEC
SQJ414EP-T1_GE3
STD1NK80ZT4
MCH6351-TL-W
MCH6351-TL-W
$0 $/piece
IRFP264PBF
IRFP264PBF
$0 $/piece
NDS9430A
FDC3512
FDC3512
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.