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SQJ414EP-T1_GE3

SQJ414EP-T1_GE3

SQJ414EP-T1_GE3

Vishay Siliconix

MOSFET N-CH 30V 30A PPAK SO-8

non-compliant

SQJ414EP-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.33561 -
6,000 $0.31383 -
15,000 $0.30294 -
30,000 $0.29700 -
6 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 15 V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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