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RM6N100S4V

RM6N100S4V

RM6N100S4V

Rectron USA

MOSFET N-CH 100V 6A SOT223-3

compliant

RM6N100S4V Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.16000 $0.16
500 $0.1584 $79.2
1000 $0.1568 $156.8
1500 $0.1552 $232.8
2000 $0.1536 $307.2
2500 $0.152 $380
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 690 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-3
Package / Case TO-261-4, TO-261AA
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