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RM12N650TI

RM12N650TI

RM12N650TI

Rectron USA

MOSFET N-CH 650V 11.5A TO220F

compliant

RM12N650TI Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.67000 $0.67
500 $0.6633 $331.65
1000 $0.6566 $656.6
1500 $0.6499 $974.85
2000 $0.6432 $1286.4
2500 $0.6365 $1591.25
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 50 V
FET Feature -
Power Dissipation (Max) 32.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
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