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SIHB23N60E-GE3

SIHB23N60E-GE3

SIHB23N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 23A D2PAK

compliant

SIHB23N60E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.11000 $4.11
500 $4.0689 $2034.45
1000 $4.0278 $4027.8
1500 $3.9867 $5980.05
2000 $3.9456 $7891.2
2500 $3.9045 $9761.25
14 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 158mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2418 pF @ 100 V
FET Feature -
Power Dissipation (Max) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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