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RM12N100LD

RM12N100LD

RM12N100LD

Rectron USA

MOSFET N-CH 100V 12A TO252-2

non-compliant

RM12N100LD Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.16000 $0.16
500 $0.1584 $79.2
1000 $0.1568 $156.8
1500 $0.1552 $232.8
2000 $0.1536 $307.2
2500 $0.152 $380
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 112mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1535 pF @ 15 V
FET Feature -
Power Dissipation (Max) 34.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-2
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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