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DMTH10H2M5STLWQ-13

DMTH10H2M5STLWQ-13

DMTH10H2M5STLWQ-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V,POWERDI10

non-compliant

DMTH10H2M5STLWQ-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.90000 $4.9
500 $4.851 $2425.5
1000 $4.802 $4802
1500 $4.753 $7129.5
2000 $4.704 $9408
2500 $4.655 $11637.5
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 215A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 124.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8450 pF @ 50 V
FET Feature -
Power Dissipation (Max) 5.8W (Ta), 230.8W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-363
Package / Case 6-TSSOP, SC-88, SOT-363
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