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RM115N65T2

RM115N65T2

RM115N65T2

Rectron USA

MOSFET N-CH 65V 115A TO220-3

SOT-23

non-compliant

RM115N65T2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.46000 $0.46
500 $0.4554 $227.7
1000 $0.4508 $450.8
1500 $0.4462 $669.3
2000 $0.4416 $883.2
2500 $0.437 $1092.5
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 65 V
Current - Continuous Drain (Id) @ 25°C 115A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) +20V, -12V
Input Capacitance (Ciss) (Max) @ Vds 5900 pF @ 30 V
FET Feature -
Power Dissipation (Max) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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