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HUF76609D3ST

HUF76609D3ST

HUF76609D3ST

onsemi

MOSFET N-CH 100V 10A TO252AA

SOT-23

non-compliant

HUF76609D3ST Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.43864 -
5,000 $0.41791 -
12,500 $0.40311 -
25,000 $0.40096 -
1846 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 425 pF @ 25 V
FET Feature -
Power Dissipation (Max) 49W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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