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PJD6N10A_L2_00001

PJD6N10A_L2_00001

PJD6N10A_L2_00001

100V N-CHANNEL MOSFET

compliant

PJD6N10A_L2_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.48000 $0.48
500 $0.4752 $237.6
1000 $0.4704 $470.4
1500 $0.4656 $698.4
2000 $0.4608 $921.6
2500 $0.456 $1140
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta), 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 310mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 508 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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