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PJD6N10A_L2_00001

PJD6N10A_L2_00001

PJD6N10A_L2_00001

100V N-CHANNEL MOSFET

non-compliant

PJD6N10A_L2_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.48000 $0.48
500 $0.4752 $237.6
1000 $0.4704 $470.4
1500 $0.4656 $698.4
2000 $0.4608 $921.6
2500 $0.456 $1140
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta), 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 310mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 508 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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