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SISA10BDN-T1-GE3

SISA10BDN-T1-GE3

SISA10BDN-T1-GE3

Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET POWE

compliant

SISA10BDN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.95000 $0.95
500 $0.9405 $470.25
1000 $0.931 $931
1500 $0.9215 $1382.25
2000 $0.912 $1824
2500 $0.9025 $2256.25
6050 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 26A (Ta), 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36.2 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 1710 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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