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NTMFS3D2N10MDT1G

NTMFS3D2N10MDT1G

NTMFS3D2N10MDT1G

onsemi

PTNG 100V LOW Q3.2MOHM N-FET, HE

non-compliant

NTMFS3D2N10MDT1G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.38000 $3.38
500 $3.3462 $1673.1
1000 $3.3124 $3312.4
1500 $3.2786 $4917.9
2000 $3.2448 $6489.6
2500 $3.211 $8027.5
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 142A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 316µA
Gate Charge (Qg) (Max) @ Vgs 71.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 155W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
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