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DMT10H009LPS-13

DMT10H009LPS-13

DMT10H009LPS-13

Diodes Incorporated

MOSFET N-CH 100V PWRDI5060

compliant

DMT10H009LPS-13 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.00000 $1
500 $0.99 $495
1000 $0.98 $980
1500 $0.97 $1455
2000 $0.96 $1920
2500 $0.95 $2375
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2309 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI5060-8
Package / Case 8-PowerTDFN
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