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NTHD3101FT3G

NTHD3101FT3G

NTHD3101FT3G

onsemi

MOSFET P-CH 20V 3.2A CHIPFET

non-compliant

NTHD3101FT3G Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 80mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package ChipFET™
Package / Case 8-SMD, Flat Lead
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