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R8010ANX

R8010ANX

R8010ANX

Rohm Semiconductor

MOSFET N-CH 800V 10A TO220FM

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R8010ANX Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.02000 $3.02
10 $2.71300 $27.13
100 $2.22300 $222.3
500 $1.89240 $946.2
1,000 $1.59600 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 560mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 25 V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
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