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NTD5802NT4G

NTD5802NT4G

NTD5802NT4G

onsemi

MOSFET N-CH 40V 16.4A/101A DPAK

non-compliant

NTD5802NT4G Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.59984 -
5,000 $0.57150 -
12,500 $0.55126 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 16.4A (Ta), 101A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5025 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 93.75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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