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FQP4N80

FQP4N80

FQP4N80

onsemi

MOSFET N-CH 800V 3.9A TO220-3

compliant

FQP4N80 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.90000 $1.9
10 $1.68600 $16.86
100 $1.33210 $133.21
500 $1.03308 $516.54
1,000 $0.81560 -
1245 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V
FET Feature -
Power Dissipation (Max) 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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