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NTD4857N-1G

NTD4857N-1G

NTD4857N-1G

onsemi

MOSFET N-CH 25V 12A/78A IPAK

compliant

NTD4857N-1G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.22000 $0.22
500 $0.2178 $108.9
1000 $0.2156 $215.6
1500 $0.2134 $320.1
2000 $0.2112 $422.4
2500 $0.209 $522.5
8400 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 12 V
FET Feature -
Power Dissipation (Max) 1.31W (Ta), 56.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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