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IPN70R1K4P7SATMA1

IPN70R1K4P7SATMA1

IPN70R1K4P7SATMA1

MOSFET N-CHANNEL 700V 4A SOT223

SOT-23

non-compliant

IPN70R1K4P7SATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.24862 -
6,000 $0.23419 -
15,000 $0.21976 -
30,000 $0.20966 -
2995 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 158 pF @ 400 V
FET Feature -
Power Dissipation (Max) 6.2W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case TO-261-4, TO-261AA
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