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NTD4856N-1G

NTD4856N-1G

NTD4856N-1G

onsemi

MOSFET N-CH 25V 13.3A/89A IPAK

non-compliant

NTD4856N-1G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.29000 $0.29
500 $0.2871 $143.55
1000 $0.2842 $284.2
1500 $0.2813 $421.95
2000 $0.2784 $556.8
2500 $0.2755 $688.75
3150 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 13.3A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2241 pF @ 12 V
FET Feature -
Power Dissipation (Max) 1.33W (Ta), 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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