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SQS660CENW-T1_GE3

SQS660CENW-T1_GE3

SQS660CENW-T1_GE3

Vishay Siliconix

AUTOMOTIVE N-CHANNEL 60 V (D-S)

compliant

SQS660CENW-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.99000 $0.99
500 $0.9801 $490.05
1000 $0.9702 $970.2
1500 $0.9603 $1440.45
2000 $0.9504 $1900.8
2500 $0.9405 $2351.25
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.2mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 25 V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8W
Package / Case PowerPAK® 1212-8W
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