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NTD30N02T4G

NTD30N02T4G

NTD30N02T4G

onsemi

N-CHANNEL POWER MOSFET

compliant

NTD30N02T4G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.28000 $0.28
500 $0.2772 $138.6
1000 $0.2744 $274.4
1500 $0.2716 $407.4
2000 $0.2688 $537.6
2500 $0.266 $665
22500 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 24 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 20 V
FET Feature -
Power Dissipation (Max) 75W (Tj)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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