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CSD25211W1015

CSD25211W1015

CSD25211W1015

Texas Instruments

MOSFET P-CH 20V 3.2A 6DSBGA

non-compliant

CSD25211W1015 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.18600 -
6,000 $0.17400 -
15,000 $0.16800 -
913 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 33mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.1 nC @ 4.5 V
Vgs (Max) -6V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-DSBGA (1x1.5)
Package / Case 6-UFBGA, DSBGA
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