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Name | Value |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 59 V |
Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 3.5V, 10V |
Rds On (Max) @ Id, Vgs | 110mOhm @ 2.6A, 10V |
Vgs(th) (Max) @ Id | 1.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 4.5 V |
Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 155 pF @ 35 V |
FET Feature | - |
Power Dissipation (Max) | 1.69W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 (TO-261) |
Package / Case | TO-261-4, TO-261AA |
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