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RQ3E180AJTB

RQ3E180AJTB

RQ3E180AJTB

Rohm Semiconductor

MOSFET N-CH 30V 18A/30A 8HSMT

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RQ3E180AJTB Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4290 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 30W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3)
Package / Case 8-PowerVDFN
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