Welcome to ichome.com!
Name | Value |
---|---|
Product Status | Last Time Buy |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250 V |
Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 620mOhm @ 4.7A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 120W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.