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SIE810DF-T1-E3

SIE810DF-T1-E3

SIE810DF-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 60A 10POLARPAK

non-compliant

SIE810DF-T1-E3 Pricing & Ordering

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3,000 $1.93812 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 10 V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 10-PolarPAK® (L)
Package / Case 10-PolarPAK® (L)
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